FDV302P-NB8V001

Invent, Innovate, Integrate

Images are for reference only. See Product Specifications for product details.

Part Number	FDV302P-NB8V001
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET P-CH 25V 120MA SOT-23
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	-8V
F E T Type	P-Channel
Packaging	Cut Tape (CT)
Other Names	FDV302P-NB8V001CT FDV302P_NB8V001CT FDV302P_NB8V001CT-ND
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	1.5V @ 250µA
Package Case	TO-236-3, SC-59, SOT-23-3
Mounting Type	Surface Mount
Rds On Max Id Vgs	10 Ohm @ 200mA, 4.5V
Gate Charge Qg Max Vgs	0.31nC @ 4.5V
Detailed Description	324834
Power Dissipation Max	350mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	SOT-23
Drainto Source Voltage Vdss	25V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	11pF @ 10V
Current Continuous Drain Id25 C	120mA (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	2.7V, 4.5V

Loading security check...

Please verify you are human by completing the security check.