FDP4D5N10C
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FDP4D5N10C |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | FET ENGR DEV-NOT REL |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | PowerTrench® |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 310µA |
| Package Case | TO-220-3 |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 4.5 mOhm @ 100A, 10V |
| Lead Free Status | Lead free |
| Gate Charge Qg Max Vgs | 68nC @ 10V |
| Detailed Description | N-Channel 100V 128A (Tc) 2.4W (Ta), 150W (Tc) Through Hole TO-220-3 |
| Power Dissipation Max | 2.4W (Ta), 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Supplier Device Package | TO-220-3 |
| Drainto Source Voltage Vdss | 100V |
| Input Capacitance Ciss Max Vds | 5065pF @ 50V |
| Current Continuous Drain Id25 C | 128A (Tc) |
| Drive Voltage Max Rds On Min Rds On | 10V |