FDP027N08B
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FDP027N08B |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET N-CH 80V 223A TO-220-3 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | PowerTrench® |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tube |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4.5V @ 250µA |
| Package Case | TO-220-3 |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 2.7 mOhm @ 100A, 10V |
| Gate Charge Qg Max Vgs | 178nC @ 10V |
| Detailed Description | N-Channel 80V 120A (Tc) 246W (Tc) Through Hole TO-220-3 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Supplier Device Package | TO-220-3 |
| Drainto Source Voltage Vdss | 80V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 13530pF @ 40V |
| Current Continuous Drain Id25 C | 120A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |