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Manufacturer Image
FDN5618P_G

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number FDN5618P_G
Manufacturer AMI Semiconductor / ON Semiconductor
Description INTEGRATED CIRCUIT
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series PowerTrench®
Vgs Max ±20V
F E T Type P-Channel
Packaging Bulk
Technology MOSFET (Metal Oxide)
Vgsth Max Id 3V @ 250µA
Package Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Rds On Max Id Vgs 170 mOhm @ 1.25A, 10V
Gate Charge Qg Max Vgs 13.8nC @ 10V
Detailed Description P-Channel 60V 1.25A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
Power Dissipation Max 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package SuperSOT-3
Drainto Source Voltage Vdss 60V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 430pF @ 30V
Current Continuous Drain Id25 C 1.25A (Ta)
Drive Voltage Max Rds On Min Rds On 4.5V, 10V

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