FDN5618P_G
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FDN5618P_G |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | INTEGRATED CIRCUIT |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | PowerTrench® |
| Vgs Max | ±20V |
| F E T Type | P-Channel |
| Packaging | Bulk |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 3V @ 250µA |
| Package Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 170 mOhm @ 1.25A, 10V |
| Gate Charge Qg Max Vgs | 13.8nC @ 10V |
| Detailed Description | P-Channel 60V 1.25A (Ta) 500mW (Ta) Surface Mount SuperSOT-3 |
| Power Dissipation Max | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | SuperSOT-3 |
| Drainto Source Voltage Vdss | 60V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 430pF @ 30V |
| Current Continuous Drain Id25 C | 1.25A (Ta) |
| Drive Voltage Max Rds On Min Rds On | 4.5V, 10V |