FDN358P

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Part Number	FDN358P
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET P-CH 30V 1.5A SSOT3
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	PowerTrench®
Vgs Max	±20V
F E T Type	P-Channel
Packaging	Cut Tape (CT)
Other Names	FDN358PCT
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	3V @ 250µA
Package Case	TO-236-3, SC-59, SOT-23-3
Mounting Type	Surface Mount
Rds On Max Id Vgs	125 mOhm @ 1.5A, 10V
Gate Charge Qg Max Vgs	5.6nC @ 10V
Detailed Description	334195
Power Dissipation Max	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	SuperSOT-3
Drainto Source Voltage Vdss	30V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	182pF @ 15V
Current Continuous Drain Id25 C	1.5A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	4.5V, 10V

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