FDMA410NZT
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FDMA410NZT |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET N-CH 20V 9.5A 6-ULMP |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±8V |
| F E T Type | N-Channel |
| Packaging | Cut Tape (CT) |
| Other Names | FDMA410NZTOSCT |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 1V @ 250µA |
| Package Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 23 mOhm @ 9.5A, 4.5V |
| Gate Charge Qg Max Vgs | 14nC @ 4.5V |
| Detailed Description | N-Channel 20V 9.5A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2) |
| Power Dissipation Max | 2.4W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | 6-MicroFET (2x2) |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1310pF @ 10V |
| Current Continuous Drain Id25 C | 9.5A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 1.5V, 4.5V |