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FDFME2P823ZT

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number FDFME2P823ZT
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 20V 2.6A 6MICROFET
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series PowerTrench®
Vgs Max ±8V
F E T Type P-Channel
Packaging Tape & Reel (TR)
F E T Feature Schottky Diode (Isolated)
Other Names FDFME2P823ZT-ND FDFME2P823ZTTR
Technology MOSFET (Metal Oxide)
Vgsth Max Id 1V @ 250µA
Package Case 6-UFDFN Exposed Pad
Mounting Type Surface Mount
Rds On Max Id Vgs 142 mOhm @ 2.3A, 4.5V
Gate Charge Qg Max Vgs 7.7nC @ 4.5V
Detailed Description 340013
Power Dissipation Max 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package 6-MicroFET (1.6x1.6)
Drainto Source Voltage Vdss 20V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 405pF @ 10V
Current Continuous Drain Id25 C 2.6A (Ta)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 1.8V, 4.5V

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