FDFMA2P853T
Images are for reference only. See Product Specifications for product details.
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Images are for reference only. See Product Specifications for product details.
| Part Number | FDFMA2P853T |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET P-CH 20V 3A 6-MICROFET |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | PowerTrench® |
| Vgs Max | ±8V |
| F E T Type | P-Channel |
| Packaging | Cut Tape (CT) |
| F E T Feature | Schottky Diode (Isolated) |
| Other Names | FDFMA2P853TCT |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 1.3V @ 250µA |
| Package Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 120 mOhm @ 3A, 4.5V |
| Gate Charge Qg Max Vgs | 6nC @ 4.5V |
| Detailed Description | 327946 |
| Power Dissipation Max | 1.4W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | MicroFET 2x2 Thin |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 435pF @ 10V |
| Current Continuous Drain Id25 C | 3A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 1.8V, 4.5V |