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Manufacturer Image
FDD10N20LZTM

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number FDD10N20LZTM
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 200V 7.6A DPAK-3
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series UniFET™
Vgs Max ±20V
F E T Type N-Channel
Packaging Cut Tape (CT)
Other Names FDD10N20LZTMCT
Technology MOSFET (Metal Oxide)
Vgsth Max Id 2.5V @ 250µA
Package Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Rds On Max Id Vgs 360 mOhm @ 3.8A, 10V
Gate Charge Qg Max Vgs 16nC @ 10V
Detailed Description 353156
Power Dissipation Max 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package DPAK
Drainto Source Voltage Vdss 200V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 585pF @ 25V
Current Continuous Drain Id25 C 7.6A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 5V, 10V

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