FDC642P-F085
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FDC642P-F085 |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET P-CH 20V 4A 6SSOT |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | Automotive, AEC-Q101, PowerTrench® |
| Vgs Max | ±8V |
| F E T Type | P-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | FDC642P-F085TR FDC642P_F085 FDC642P_F085-ND FDC642P_F085P FDC642P_F085TR FDC642P_F085TR-ND |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 1.5V @ 250µA |
| Package Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 65 mOhm @ 4A, 4.5V |
| Gate Charge Qg Max Vgs | 16nC @ 4.5V |
| Detailed Description | P-Channel 20V 4A (Ta) 1.2W (Ta) Surface Mount SuperSOT™-6 |
| Power Dissipation Max | 1.2W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | SuperSOT™-6 |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 640pF @ 10V |
| Current Continuous Drain Id25 C | 4A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 2.5V, 4.5V |