FDC6392S
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FDC6392S |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET P-CH 20V 2.2A SSOT-6 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | PowerTrench® |
| Vgs Max | ±12V |
| F E T Type | P-Channel |
| Packaging | Cut Tape (CT) |
| F E T Feature | Schottky Diode (Isolated) |
| Other Names | FDC6392S_NLCT FDC6392S_NLCT-ND FDC6392SCT |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 1.5V @ 250µA |
| Package Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 150 mOhm @ 2.2A, 4.5V |
| Gate Charge Qg Max Vgs | 5.2nC @ 4.5V |
| Detailed Description | P-Channel 20V 2.2A (Ta) 960mW (Ta) Surface Mount SuperSOT™-6 |
| Power Dissipation Max | 960mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | SuperSOT™-6 |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 369pF @ 10V |
| Current Continuous Drain Id25 C | 2.2A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 2.5V, 4.5V |