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FDB86366-F085

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number FDB86366-F085
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 80V 110A TO263
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series Automotive, AEC-Q101, PowerTrench®
Vgs Max ±20V
F E T Type N-Channel
Packaging Tape & Reel (TR)
Other Names FDB86366-F085TR FDB86366_F085 FDB86366_F085-ND FDB86366_F085TR FDB86366_F085TR-ND
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4V @ 250µA
Package Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Rds On Max Id Vgs 3.6 mOhm @ 80A, 10V
Gate Charge Qg Max Vgs 112nC @ 10V
Detailed Description N-Channel 80V 110A (Tc) 176W (Tj) Surface Mount D²PAK (TO-263AB)
Power Dissipation Max 176W (Tj)
Operating Temperature -55°C ~ 175°C (TJ)
Supplier Device Package D²PAK (TO-263AB)
Drainto Source Voltage Vdss 80V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 6280pF @ 40V
Current Continuous Drain Id25 C 110A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 10V

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