FDB0260N1007L

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Part Number	FDB0260N1007L
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 100V 200A D2PAK
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	PowerTrench®
Vgs Max	±20V
F E T Type	N-Channel
Packaging	Tape & Reel (TR)
Other Names	FDB0260N1007LTR
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4V @ 250µA
Package Case	TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type	Surface Mount
Rds On Max Id Vgs	2.6 mOhm @ 27A, 10V
Gate Charge Qg Max Vgs	118nC @ 10V
Detailed Description	334922
Power Dissipation Max	3.8W (Ta), 250W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Supplier Device Package	D²PAK (TO-263)
Drainto Source Voltage Vdss	100V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	8545pF @ 50V
Current Continuous Drain Id25 C	200A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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