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Product Image
FDB0165N807L

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number FDB0165N807L
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 80V 310A TO263
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series PowerTrench®
Vgs Max ±20V
F E T Type N-Channel
Packaging Cut Tape (CT)
Other Names FDB0165N807LCT
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4V @ 250µA
Package Case TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type Surface Mount
Rds On Max Id Vgs 1.6 mOhm @ 36A, 10V
Gate Charge Qg Max Vgs 304nC @ 10V
Detailed Description 339583
Power Dissipation Max 3.8W (Ta), 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Supplier Device Package D²PAK (TO-263)
Drainto Source Voltage Vdss 80V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 23660pF @ 40V
Current Continuous Drain Id25 C 310A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 10V

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