FCP190N65F

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Part Number	FCP190N65F
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 650V 20.6A TO220-3
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	FRFET®, SuperFET® II
Vgs Max	±20V
F E T Type	N-Channel
Packaging	Tube
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	5V @ 2mA
Package Case	TO-220-3
Mounting Type	Through Hole
Rds On Max Id Vgs	190 mOhm @ 10A, 10V
Gate Charge Qg Max Vgs	78nC @ 10V
Detailed Description	335382
Power Dissipation Max	208W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	TO-220-3
Drainto Source Voltage Vdss	650V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	3225pF @ 25V
Current Continuous Drain Id25 C	20.6A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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