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Manufacturer Image
FCP165N65S3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number FCP165N65S3
Manufacturer AMI Semiconductor / ON Semiconductor
Description SF3 650V 165MOHM E TO220
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series SuperFET® III
Vgs Max ±30V
F E T Type N-Channel
Other Names FCP165N65S3-ND FCP165N65S3OS
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4.5V @ 1.9mA
Package Case TO-220-3
Mounting Type Through Hole
Rds On Max Id Vgs 165 mOhm @ 9.5A, 10V
Lead Free Status Lead free
Gate Charge Qg Max Vgs 39nC @ 10V
Detailed Description N-Channel 650V 19A (Tc) 154W (Tc) Through Hole TO-220-3
Power Dissipation Max 154W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-220-3
Drainto Source Voltage Vdss 650V
Input Capacitance Ciss Max Vds 1500pF @ 400V
Current Continuous Drain Id25 C 19A (Tc)
Moisture Sensitivity Level M S L Not Applicable
Drive Voltage Max Rds On Min Rds On 10V

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