FCP165N65S3
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FCP165N65S3 |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | SF3 650V 165MOHM E TO220 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | SuperFET® III |
| Vgs Max | ±30V |
| F E T Type | N-Channel |
| Other Names | FCP165N65S3-ND FCP165N65S3OS |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4.5V @ 1.9mA |
| Package Case | TO-220-3 |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 165 mOhm @ 9.5A, 10V |
| Lead Free Status | Lead free |
| Gate Charge Qg Max Vgs | 39nC @ 10V |
| Detailed Description | N-Channel 650V 19A (Tc) 154W (Tc) Through Hole TO-220-3 |
| Power Dissipation Max | 154W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | TO-220-3 |
| Drainto Source Voltage Vdss | 650V |
| Input Capacitance Ciss Max Vds | 1500pF @ 400V |
| Current Continuous Drain Id25 C | 19A (Tc) |
| Moisture Sensitivity Level M S L | Not Applicable |
| Drive Voltage Max Rds On Min Rds On | 10V |