• info@zenkaeurope.com
  • English
    English
    Deutsch
    Français
    Español
    Italiano
    中文
    हिन्दी
    Lietuviškai
Product Image
EPC8010ENGR

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number EPC8010ENGR
Manufacturer EPC
Description TRANS GAN 100V 2.7A BUMPED DIE
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series eGaN®
F E T Feature N-Channel
Other Names 917-EPC8010ENGR EPC8010ENGJ
Ro H S Status Tray
Technology GaNFET (Gallium Nitride)
Vgsth Max Id 160 mOhm @ 500mA, 5V
Voltage Test 55pF @ 50V
Mounting Type Surface Mount
Rds On Max Id Vgs 2.7A (Ta)
Voltage Breakdown Die
Gate Charge Qg Max Vgs 2.5V @ 250µA
Expanded Description N-Channel 100V 2.7A (Ta) Surface Mount Die
Operating Temperature -40°C ~ 150°C (TJ)
Manufacturer Part Number EPC8010ENGR
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 0.48nC @ 5V
Current Continuous Drain Id25 C 100V
Moisture Sensitivity Level M S L 1 (Unlimited)

REQUEST A QUOTE


Contact Us

We're here round-the-clock for inquiries, partnership opportunities, or any assistance you need.

Contact Us