EPC8010
Images are for reference only. See Product Specifications for product details.
Images are for reference only. See Product Specifications for product details.
| Part Number | EPC8010 |
| Manufacturer | EPC |
| Description | TRANS GAN 100V 2.7A BUMPED DIE |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Vgsth Max Id | 2.5V @ 250µA |
| Technology | GaNFET (Gallium Nitride) |
| Supplier Device Package | Die |
| Series | eGaN® |
| Rds On Max Id Vgs | 160 mOhm @ 500mA, 5V |
| Packaging | Cut Tape (CT) |
| Package Case | Die |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| F E T Type | N-Channel |
| Detailed Description | N-Channel 100V 2.7A (Ta) Surface Mount Die |
| Current Continuous Drain Id25 C | 2.7A (Ta) |
| Vgs Max | +6V, -4V |
| Other Names | 917-1086-1 |
| Input Capacitance Ciss Max Vds | 55pF @ 50V |
| Gate Charge Qg Max Vgs | 0.48nC @ 5V |
| Drive Voltage Max Rds On Min Rds On | 5V |
| Drainto Source Voltage Vdss | 100V |