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EPC8010

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number EPC8010
Manufacturer EPC
Description TRANS GAN 100V 2.7A BUMPED DIE
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series eGaN®
Vgs Max +6V, -4V
F E T Type N-Channel
Packaging Cut Tape (CT)
Other Names 917-1086-1
Technology GaNFET (Gallium Nitride)
Vgsth Max Id 2.5V @ 250µA
Package Case Die
Mounting Type Surface Mount
Rds On Max Id Vgs 160 mOhm @ 500mA, 5V
Gate Charge Qg Max Vgs 0.48nC @ 5V
Detailed Description 322462
Operating Temperature -40°C ~ 150°C (TJ)
Supplier Device Package Die
Drainto Source Voltage Vdss 100V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 55pF @ 50V
Current Continuous Drain Id25 C 2.7A (Ta)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 5V

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