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Product Image
EPC8003ENGR

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number EPC8003ENGR
Manufacturer EPC
Description TRANS GAN 100V 2.5A BUMPED DIE
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series eGaN®
F E T Feature N-Channel
Other Names 917-EPC8003ENGR EPC8003ENGK
Ro H S Status Tray
Technology GaNFET (Gallium Nitride)
Vgsth Max Id 300 mOhm @ 500mA, 5V
Voltage Test 38pF @ 50V
Mounting Type Surface Mount
Polarization Die
Rds On Max Id Vgs 2.5A (Ta)
Voltage Breakdown Die
Gate Charge Qg Max Vgs 2.5V @ 250µA
Expanded Description N-Channel 100V 2.5A (Ta) Surface Mount Die
Operating Temperature -40°C ~ 125°C (TJ)
Manufacturer Part Number EPC8003ENGR
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 0.32nC @ 5V
Current Continuous Drain Id25 C 100V
Moisture Sensitivity Level M S L 1 (Unlimited)

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