EPC8002ENGR
Images are for reference only. See Product Specifications for product details.
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Images are for reference only. See Product Specifications for product details.
| Part Number | EPC8002ENGR |
| Manufacturer | EPC |
| Description | TRANS GAN 65V 2A BUMPED DIE |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | eGaN® |
| F E T Feature | N-Channel |
| Other Names | 917-EPC8002ENGR EPC8002ENGI |
| Ro H S Status | Tray |
| Technology | GaNFET (Gallium Nitride) |
| Vgsth Max Id | 530 mOhm @ 500mA, 5V |
| Voltage Test | 21pF @ 32.5V |
| Mounting Type | Surface Mount |
| Polarization | Die |
| Rds On Max Id Vgs | 2A (Ta) |
| Voltage Breakdown | Die |
| Gate Charge Qg Max Vgs | 2.5V @ 250µA |
| Expanded Description | N-Channel 65V 2A (Ta) Surface Mount Die |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Manufacturer Part Number | EPC8002ENGR |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 0.14nC @ 5V |
| Current Continuous Drain Id25 C | 65V |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |