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EPC8002ENGR

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Product Details

Part Number EPC8002ENGR
Manufacturer EPC
Description TRANS GAN 65V 2A BUMPED DIE
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Vgsth Max Id 530 mOhm @ 500mA, 5V
Technology GaNFET (Gallium Nitride)
Series eGaN®
Rds On Max Id Vgs 2A (Ta)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level M S L 1 (Unlimited)
F E T Feature N-Channel
Current Continuous Drain Id25 C 65V
Other Names 917-EPC8002ENGR EPC8002ENGI
Input Capacitance Ciss Max Vds 0.14nC @ 5V
Gate Charge Qg Max Vgs 2.5V @ 250µA
Voltage Test 21pF @ 32.5V
Voltage Breakdown Die
Ro H S Status Tray
Polarization Die
Manufacturer Part Number EPC8002ENGR
Expanded Description N-Channel 65V 2A (Ta) Surface Mount Die

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