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EPC2022

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Product Details

Part Number EPC2022
Manufacturer EPC
Description TRANS GAN 100V 3MOHM BUMPED DIE
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Vgsth Max Id 2.5V @ 12mA
Technology GaNFET (Gallium Nitride)
Supplier Device Package Die
Series eGaN®
Rds On Max Id Vgs 3.2 mOhm @ 25A, 5V
Packaging Original-Reel®
Package Case Die
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level M S L 1 (Unlimited)
F E T Type N-Channel
Detailed Description N-Channel 100V 60A (Ta) Surface Mount Die
Current Continuous Drain Id25 C 60A (Ta)
Vgs Max +6V, -4V
Other Names 917-1133-6
Input Capacitance Ciss Max Vds 1500pF @ 50V
Drive Voltage Max Rds On Min Rds On 5V
Drainto Source Voltage Vdss 100V

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