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EPC2019ENG

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number EPC2019ENG
Manufacturer EPC
Description TRANS GAN 200V 8.5A BUMPED DIE
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series eGaN®
F E T Feature N-Channel
Other Names 917-1055-2
Ro H S Status Tape & Reel (TR)
Technology GaNFET (Gallium Nitride)
Vgsth Max Id 50 mOhm @ 7A, 5V
Voltage Test 270pF @ 100V
Mounting Type Surface Mount
Polarization Die
Rds On Max Id Vgs 8.5A (Ta)
Voltage Breakdown Die
Gate Charge Qg Max Vgs 2.5V @ 1.5mA
Expanded Description N-Channel 200V 8.5A (Ta) Surface Mount Die
Operating Temperature -40°C ~ 150°C (TJ)
Manufacturer Part Number EPC2019ENG
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 2.5nC @ 5V
Current Continuous Drain Id25 C 200V
Moisture Sensitivity Level M S L 1 (Unlimited)

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