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EPC2012CENGR

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number EPC2012CENGR
Manufacturer EPC
Description TRANS GAN 200V 5A BUMPED DIE
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series eGaN®
F E T Feature N-Channel
Other Names 917-EPC2012CENGRTR
Ro H S Status Tape & Reel (TR)
Technology GaNFET (Gallium Nitride)
Vgsth Max Id 100 mOhm @ 3A, 5V
Voltage Test 100pF @ 100V
Mounting Type Surface Mount
Polarization Die
Rds On Max Id Vgs 5A (Ta)
Voltage Breakdown Die Outline (4-Solder Bar)
Gate Charge Qg Max Vgs 2.5V @ 1mA
Expanded Description N-Channel 200V 5A (Ta) Surface Mount Die Outline (4-Solder Bar)
Operating Temperature -40°C ~ 150°C (TJ)
Manufacturer Part Number EPC2012CENGR
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 1nC @ 5V
Current Continuous Drain Id25 C 200V
Moisture Sensitivity Level M S L 1 (Unlimited)

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