DMJ70H900HJ3

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Part Number	DMJ70H900HJ3
Manufacturer	Diodes Incorporated
Description	MOSFET BVDSS: 651V 800V TO251
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	Automotive, AEC-Q101
Vgs Max	±30V
F E T Type	N-Channel
Packaging	Tube
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4V @ 250µA
Package Case	TO-251-3, IPak, Short Leads
Mounting Type	Through Hole
Rds On Max Id Vgs	900 mOhm @ 1.5A, 10V
Gate Charge Qg Max Vgs	18.4nC @ 10V
Detailed Description	325482
Power Dissipation Max	68W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	TO-251
Drainto Source Voltage Vdss	700V
Lead Free Status Ro H S Status	Contains lead / RoHS Compliant
Input Capacitance Ciss Max Vds	603pF @ 50V
Current Continuous Drain Id25 C	7A (Tc)
Drive Voltage Max Rds On Min Rds On	10V

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