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Manufacturer Image
DMG7N65SJ3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number DMG7N65SJ3
Manufacturer Diodes Incorporated
Description MOSFET BVDSS: 501V 650V TO251
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series Automotive, AEC-Q101
Vgs Max ±30V
F E T Type N-Channel
Packaging Tube
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4V @ 250µA
Package Case TO-251-3, IPak, Short Leads
Mounting Type Through Hole
Rds On Max Id Vgs 1.4 Ohm @ 2.5A, 10V
Gate Charge Qg Max Vgs 25nC @ 10V
Detailed Description 349559
Power Dissipation Max 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-251
Drainto Source Voltage Vdss 650V
Lead Free Status Ro H S Status Contains lead / RoHS Compliant
Input Capacitance Ciss Max Vds 886pF @ 50V
Current Continuous Drain Id25 C 5.5A (Tc)
Drive Voltage Max Rds On Min Rds On 10V

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