Name: DMG4N60SJ3
Brand: Diodes Incorporated
SKU: DMG4N60SJ3
Rating: 4 (479 reviews)

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Part Number	DMG4N60SJ3
Manufacturer	Diodes Incorporated
Description	MOSFET NCH 600V 3A TO251
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±30V
F E T Type	N-Channel
Packaging	Tube
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4.5V @ 250µA
Package Case	TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type	Through Hole
Rds On Max Id Vgs	2.5 Ohm @ 2A, 10V
Gate Charge Qg Max Vgs	14.3nC @ 10V
Detailed Description	N-Channel 600V 3A (Tc) 41W (Tc) Through Hole TO-251
Power Dissipation Max	41W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	TO-251
Drainto Source Voltage Vdss	600V
Lead Free Status Ro H S Status	Contains lead / RoHS Compliant
Input Capacitance Ciss Max Vds	532pF @ 25V
Current Continuous Drain Id25 C	3A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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