CSD19536KTTT
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | CSD19536KTTT |
| Manufacturer | N/A |
| Description | MOSFET N-CH 100V 200A TO263 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | NexFET™ |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | 296-41136-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 3.2V @ 250µA |
| Package Case | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 2.4 mOhm @ 100A, 10V |
| Gate Charge Qg Max Vgs | 153nC @ 10V |
| Detailed Description | N-Channel 100V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3 |
| Power Dissipation Max | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Supplier Device Package | DDPAK/TO-263-3 |
| Drainto Source Voltage Vdss | 100V |
| Lead Free Status Ro H S Status | Contains lead / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 12000pF @ 50V |
| Current Continuous Drain Id25 C | 200A (Ta) |
| Moisture Sensitivity Level M S L | 2 (1 Year) |
| Drive Voltage Max Rds On Min Rds On | 6V, 10V |