BSP149L6327HTSA1
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | BSP149L6327HTSA1 |
| Manufacturer | International Rectifier (Infineon Technologies) |
| Description | MOSFET N-CH 200V 660MA SOT-223 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | SIPMOS® |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| F E T Feature | Depletion Mode |
| Other Names | BSP149 L6327 BSP149 L6327-ND BSP149L6327HTSA1TR BSP149L6327INTR BSP149L6327INTR-ND BSP149L6327XT SP000089214 |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 1V @ 400µA |
| Package Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 1.8 Ohm @ 660mA, 10V |
| Gate Charge Qg Max Vgs | 14nC @ 5V |
| Detailed Description | N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4 |
| Power Dissipation Max | 1.8W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | PG-SOT223-4 |
| Drainto Source Voltage Vdss | 200V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 430pF @ 25V |
| Current Continuous Drain Id25 C | 660mA (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 0V, 10V |