BSC046N02KS G
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | BSC046N02KS G |
| Manufacturer | Infineon Technologies |
| Description | MOSFET N-CH 20V 80A TDSON-8 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | OptiMOS™ |
| Vgs Max | 2.5V, 4.5V |
| I G B T Type | ±12V |
| F E T Feature | N-Channel |
| Other Names | BSC046N02KS G-ND BSC046N02KS GTR BSC046N02KSG BSC046N02KSGAUMA1 SP000379666 |
| Ro H S Status | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4.6 mOhm @ 50A, 4.5V |
| Voltage Test | 4100pF @ 10V |
| Mounting Type | Surface Mount |
| Polarization | 8-PowerTDFN |
| Rds On Max Id Vgs | 19A (Ta), 80A (Tc) |
| Capacitance Ratio | 2.8W (Ta), 48W (Tc) |
| Voltage Breakdown | PG-TDSON-8 |
| Gate Charge Qg Max Vgs | 1.2V @ 110µA |
| Expanded Description | N-Channel 20V 19A (Ta), 80A (Tc) 2.8W (Ta), 48W (Tc) Surface Mount PG-TDSON-8 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Manufacturer Part Number | BSC046N02KS G |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 27.6nC @ 4.5V |
| Current Continuous Drain Id25 C | 20V |
| Moisture Sensitivity Level M S L | 3 (168 Hours) |