2SJ661-DL-1E
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | 2SJ661-DL-1E |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET P-CH 60V 38A |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±20V |
| F E T Type | P-Channel |
| Packaging | Original-Reel® |
| Other Names | 2SJ661-DL-1EOSDKR |
| Technology | MOSFET (Metal Oxide) |
| Package Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 39 mOhm @ 19A, 10V |
| Gate Charge Qg Max Vgs | 80nC @ 10V |
| Detailed Description | P-Channel 60V 38A (Ta) 1.65W (Ta), 65W (Tc) Surface Mount TO-263-2 |
| Power Dissipation Max | 1.65W (Ta), 65W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | TO-263-2 |
| Drainto Source Voltage Vdss | 60V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 4360pF @ 20V |
| Current Continuous Drain Id25 C | 38A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 4V, 10V |