2N7000-D26Z

Invent, Innovate, Integrate

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Part Number	2N7000-D26Z
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 60V 200MA TO-92
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±20V
F E T Type	N-Channel
Packaging	Cut Tape (CT)
Other Names	2N7000-D26ZCT 2N7000_D26ZCT 2N7000_D26ZCT-ND
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	3V @ 1mA
Package Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type	Through Hole
Rds On Max Id Vgs	5 Ohm @ 500mA, 10V
Base Part Number	2N7000
Detailed Description	332904
Power Dissipation Max	400mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	TO-92-3
Drainto Source Voltage Vdss	60V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	50pF @ 25V
Current Continuous Drain Id25 C	200mA (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	4.5V, 10V

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