VWM200-01P
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | VWM200-01P |
| Manufacturer | IXYS Corporation |
| Description | MOSFET 6N-CH 100V 210A V2 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| F E T Type | 6 N-Channel (3-Phase Bridge) |
| Packaging | Bulk |
| F E T Feature | Standard |
| Vgsth Max Id | 4V @ 2mA |
| Package Case | V2-PAK |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 5.2 mOhm @ 100A, 10V |
| Gate Charge Qg Max Vgs | 430nC @ 10V |
| Detailed Description | Mosfet Array 6 N-Channel (3-Phase Bridge) 100V 210A Through Hole V2-PAK |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Supplier Device Package | V2-PAK |
| Drainto Source Voltage Vdss | 100V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Continuous Drain Id25 C | 210A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |