TPD3215M
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | TPD3215M |
| Manufacturer | Transphorm |
| Description | CASCODE GAN HB 600V 70A MODULE |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| F E T Type | 2 N-Channel (Half Bridge) |
| Power Max | 470W |
| Packaging | Bulk |
| F E T Feature | GaNFET (Gallium Nitride) |
| Other Names | TPH3215M TPH3215M-ND |
| Package Case | Module |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 34 mOhm @ 30A, 8V |
| Gate Charge Qg Max Vgs | 28nC @ 8V |
| Detailed Description | Mosfet Array 2 N-Channel (Half Bridge) 600V 70A (Tc) 470W Through Hole Module |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Supplier Device Package | Module |
| Drainto Source Voltage Vdss | 600V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 2260pF @ 100V |
| Current Continuous Drain Id25 C | 70A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |