SSM6N15AFE,LM
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SSM6N15AFE,LM |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET 2N-CH 30V 0.1A ES6 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| F E T Type | 2 N-Channel (Dual) |
| Power Max | 150mW |
| Packaging | Tape & Reel (TR) |
| F E T Feature | Logic Level Gate |
| Other Names | SSM6N15AFE,LM(A SSM6N15AFE,LM(B SSM6N15AFE,LM(T SSM6N15AFE,LMTR SSM6N15AFELM SSM6N15AFELMTR SSM6N15FE (TE85L,F) SSM6N15FE(TE85L,F) SSM6N15FE(TE85LF)TR SSM6N15FE(TE85LF)TR-ND SSM6N15FETE85LF |
| Vgsth Max Id | 1.5V @ 100µA |
| Package Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 4 Ohm @ 10mA, 4V |
| Base Part Number | SSM6N15 |
| Detailed Description | Mosfet Array 2 N-Channel (Dual) 30V 100mA 150mW Surface Mount ES6 (1.6x1.6) |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | ES6 (1.6x1.6) |
| Drainto Source Voltage Vdss | 30V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 7.8pF @ 3V |
| Current Continuous Drain Id25 C | 100mA |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |