SQJ200EP-T1_GE3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SQJ200EP-T1_GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET 2N-CH 20V 20A/60A PPAK SO |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| Series | Automotive, AEC-Q101, TrenchFET® |
| F E T Type | 2 N-Channel (Dual) |
| Power Max | 27W, 48W |
| Packaging | Cut Tape (CT) |
| F E T Feature | Standard |
| Other Names | SQJ200EP-T1_GE3CT |
| Vgsth Max Id | 2V @ 250µA |
| Package Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 8.8 mOhm @ 16A, 10V |
| Gate Charge Qg Max Vgs | 18nC @ 10V |
| Detailed Description | Mosfet Array 2 N-Channel (Dual) 20V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Supplier Device Package | PowerPAK® SO-8 Dual Asymmetric |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 975pF @ 10V |
| Current Continuous Drain Id25 C | 20A, 60A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |