SIZF916DT-T1-GE3
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SIZF916DT-T1-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH DUAL 30V |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| Series | TrenchFET® Gen IV |
| F E T Type | 2 N-Channel (Dual) |
| Power Max | 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) |
| Packaging | Tape & Reel (TR) |
| F E T Feature | Standard |
| Other Names | SIZF916DT-T1-GE3TR |
| Vgsth Max Id | 2.4V @ 250µA, 2.2V @ 250µA |
| Package Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 4 mOhm @ 10A, 10V, 1.25 mOhm @ 10A, 10V |
| Gate Charge Qg Max Vgs | 22nC @ 10V, 95nC @ 10V |
| Detailed Description | Mosfet Array 2 N-Channel (Dual) 30V 23A (Ta), 40A (Tc) 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) Surface Mount 8-PowerPair® (6x5) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | 8-PowerPair® (6x5) |
| Drainto Source Voltage Vdss | 30V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1060pF @ 15V, 4320pF @ 15V |
| Current Continuous Drain Id25 C | 23A (Ta), 40A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |