SIS903DN-T1-GE3
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SIS903DN-T1-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET DUAL P-CHAN POWERPAK 1212 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| Series | TrenchFET® Gen III |
| F E T Type | 2 P-Channel (Dual) |
| Power Max | 2.6W (Ta), 23W (Tc) |
| Packaging | Cut Tape (CT) |
| F E T Feature | Standard |
| Other Names | SIS903DN-T1-GE3CT |
| Vgsth Max Id | 1V @ 250µA |
| Package Case | PowerPAK® 1212-8 Dual |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 20.1 mOhm @ 5A, 4.5V |
| Gate Charge Qg Max Vgs | 42nC @ 10V |
| Detailed Description | Mosfet Array 2 P-Channel (Dual) 20V 6A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PowerPAK® 1212-8 Dual |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 2565pF @ 10V |
| Current Continuous Drain Id25 C | 6A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |