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SI7960DP-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SI7960DP-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2N-CH 60V 6.2A PPAK SO-8
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
F E T Type 2 N-Channel (Dual)
Power Max 1.4W
Packaging Original-Reel®
F E T Feature Logic Level Gate
Other Names SI7960DP-T1-GE3DKR
Vgsth Max Id 3V @ 250µA
Package Case PowerPAK® SO-8 Dual
Mounting Type Surface Mount
Rds On Max Id Vgs 21 mOhm @ 9.7A, 10V
Base Part Number SI7960
Gate Charge Qg Max Vgs 75nC @ 10V
Detailed Description Mosfet Array 2 N-Channel (Dual) 60V 6.2A 1.4W Surface Mount PowerPAK® SO-8 Dual
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package PowerPAK® SO-8 Dual
Drainto Source Voltage Vdss 60V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Continuous Drain Id25 C 6.2A
Moisture Sensitivity Level M S L 1 (Unlimited)

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