SI7960DP-T1-GE3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI7960DP-T1-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET 2N-CH 60V 6.2A PPAK SO-8 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| Series | TrenchFET® |
| F E T Type | 2 N-Channel (Dual) |
| Power Max | 1.4W |
| Packaging | Original-Reel® |
| F E T Feature | Logic Level Gate |
| Other Names | SI7960DP-T1-GE3DKR |
| Vgsth Max Id | 3V @ 250µA |
| Package Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 21 mOhm @ 9.7A, 10V |
| Base Part Number | SI7960 |
| Gate Charge Qg Max Vgs | 75nC @ 10V |
| Detailed Description | Mosfet Array 2 N-Channel (Dual) 60V 6.2A 1.4W Surface Mount PowerPAK® SO-8 Dual |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | PowerPAK® SO-8 Dual |
| Drainto Source Voltage Vdss | 60V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Continuous Drain Id25 C | 6.2A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |