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SI7911DN-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SI7911DN-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2P-CH 20V 4.2A 1212-8
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
F E T Type 2 P-Channel (Dual)
Power Max 1.3W
Packaging Cut Tape (CT)
F E T Feature Logic Level Gate
Other Names SI7911DN-T1-GE3CT
Vgsth Max Id 1V @ 250µA
Package Case PowerPAK® 1212-8 Dual
Mounting Type Surface Mount
Rds On Max Id Vgs 51 mOhm @ 5.7A, 4.5V
Base Part Number SI7911
Gate Charge Qg Max Vgs 15nC @ 4.5V
Detailed Description Mosfet Array 2 P-Channel (Dual) 20V 4.2A 1.3W Surface Mount PowerPAK® 1212-8 Dual
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package PowerPAK® 1212-8 Dual
Drainto Source Voltage Vdss 20V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Continuous Drain Id25 C 4.2A
Moisture Sensitivity Level M S L 1 (Unlimited)

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