SI5980DU-T1-GE3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI5980DU-T1-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET 2N-CH 100V 2.5A CHIPFET |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| Series | TrenchFET® |
| F E T Type | 2 N-Channel (Dual) |
| Power Max | 7.8W |
| Packaging | Cut Tape (CT) |
| F E T Feature | Standard |
| Other Names | SI5980DU-T1-GE3CT |
| Vgsth Max Id | 4V @ 250µA |
| Package Case | PowerPAK® ChipFET™ Dual |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 567 mOhm @ 400mA, 10V |
| Base Part Number | SI5980 |
| Gate Charge Qg Max Vgs | 3.3nC @ 10V |
| Detailed Description | Mosfet Array 2 N-Channel (Dual) 100V 2.5A 7.8W Surface Mount PowerPAK® ChipFet Dual |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | PowerPAK® ChipFet Dual |
| Drainto Source Voltage Vdss | 100V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 78pF @ 50V |
| Current Continuous Drain Id25 C | 2.5A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |