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SI5902BDC-T1-E3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SI5902BDC-T1-E3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2N-CH 30V 4A 1206-8
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
F E T Type 2 N-Channel (Dual)
Power Max 3.12W
Packaging Cut Tape (CT)
F E T Feature Logic Level Gate
Other Names SI5902BDC-T1-E3CT
Vgsth Max Id 3V @ 250µA
Package Case 8-SMD, Flat Lead
Mounting Type Surface Mount
Rds On Max Id Vgs 65 mOhm @ 3.1A, 10V
Gate Charge Qg Max Vgs 7nC @ 10V
Detailed Description Mosfet Array 2 N-Channel (Dual) 30V 4A (Tc) 3.12W Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Drainto Source Voltage Vdss 30V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 220pF @ 15V
Current Continuous Drain Id25 C 4A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)

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