SI5517DU-T1-GE3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI5517DU-T1-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N/P-CH 20V 6A CHIPFET |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| Series | TrenchFET® |
| F E T Type | N and P-Channel |
| Power Max | 8.3W |
| Packaging | Cut Tape (CT) |
| F E T Feature | Logic Level Gate |
| Other Names | SI5517DU-T1-GE3CT |
| Vgsth Max Id | 1V @ 250µA |
| Package Case | PowerPAK® ChipFET™ Dual |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 39 mOhm @ 4.4A, 4.5V |
| Base Part Number | SI5517 |
| Gate Charge Qg Max Vgs | 16nC @ 8V |
| Detailed Description | Mosfet Array N and P-Channel 20V 6A 8.3W Surface Mount PowerPAK® ChipFet Dual |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | PowerPAK® ChipFet Dual |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 520pF @ 10V |
| Current Continuous Drain Id25 C | 6A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |