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SI5513CDC-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SI5513CDC-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N/P-CH 20V 4A 1206-8
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
F E T Type N and P-Channel
Power Max 3.1W
Packaging Tape & Reel (TR)
F E T Feature Logic Level Gate
Other Names SI5513CDC-T1-GE3TR SI5513CDCT1GE3
Vgsth Max Id 1.5V @ 250µA
Package Case 8-SMD, Flat Lead
Mounting Type Surface Mount
Rds On Max Id Vgs 55 mOhm @ 4.4A, 4.5V
Base Part Number SI5513
Gate Charge Qg Max Vgs 4.2nC @ 5V
Detailed Description Mosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount 1206-8 ChipFET™
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package 1206-8 ChipFET™
Drainto Source Voltage Vdss 20V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 285pF @ 10V
Current Continuous Drain Id25 C 4A, 3.7A
Moisture Sensitivity Level M S L 1 (Unlimited)

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