SI5509DC-T1-E3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI5509DC-T1-E3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N/P-CH 20V 6.1A 1206-8 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| Series | TrenchFET® |
| F E T Type | N and P-Channel |
| Power Max | 4.5W |
| Packaging | Tape & Reel (TR) |
| F E T Feature | Logic Level Gate |
| Other Names | SI5509DC-T1-E3TR SI5509DCT1E3 |
| Vgsth Max Id | 2V @ 250µA |
| Package Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 52 mOhm @ 5A, 4.5V |
| Base Part Number | SI5509 |
| Gate Charge Qg Max Vgs | 6.6nC @ 5V |
| Detailed Description | Mosfet Array N and P-Channel 20V 6.1A, 4.8A 4.5W Surface Mount 1206-8 ChipFET™ |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 455pF @ 10V |
| Current Continuous Drain Id25 C | 6.1A, 4.8A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |