SI4816BDY-T1-GE3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI4816BDY-T1-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET 2N-CH 30V 5.8A 8-SOIC |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| Series | LITTLE FOOT® |
| F E T Type | 2 N-Channel (Half Bridge) |
| Power Max | 1W, 1.25W |
| Packaging | Tape & Reel (TR) |
| F E T Feature | Logic Level Gate |
| Other Names | SI4816BDY-T1-GE3TR SI4816BDYT1GE3 |
| Vgsth Max Id | 3V @ 250µA |
| Package Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 18.5 mOhm @ 6.8A, 10V |
| Base Part Number | SI4816 |
| Gate Charge Qg Max Vgs | 10nC @ 5V |
| Detailed Description | Mosfet Array 2 N-Channel (Half Bridge) 30V 5.8A, 8.2A 1W, 1.25W Surface Mount 8-SO |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | 8-SO |
| Drainto Source Voltage Vdss | 30V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Continuous Drain Id25 C | 5.8A, 8.2A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |