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Manufacturer Image
SI4500BDY-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SI4500BDY-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N/P-CH 20V 6.6A 8-SOIC
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
F E T Type N and P-Channel, Common Drain
Power Max 1.3W
Packaging Cut Tape (CT)
F E T Feature Logic Level Gate
Other Names SI4500BDY-T1-GE3CT
Vgsth Max Id 1.5V @ 250µA
Package Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Rds On Max Id Vgs 20 mOhm @ 9.1A, 4.5V
Base Part Number SI4500
Gate Charge Qg Max Vgs 17nC @ 4.5V
Detailed Description Mosfet Array N and P-Channel, Common Drain 20V 6.6A, 3.8A 1.3W Surface Mount 8-SO
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package 8-SO
Drainto Source Voltage Vdss 20V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Continuous Drain Id25 C 6.6A, 3.8A
Moisture Sensitivity Level M S L 1 (Unlimited)

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