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SI3900DV-T1-E3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SI3900DV-T1-E3
Manufacturer 4D Systems
Description MOSFET 2N-CH 20V 2A 6-TSOP
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
Power Max 830mW
F E T Feature 2 N-Channel (Dual)
Other Names SI3900DV-T1-E3TR SI3900DVT1E3
Ro H S Status Tape & Reel (TR)
Vgsth Max Id 125 mOhm @ 2.4A, 4.5V
Mounting Type Surface Mount
Polarization SOT-23-6 Thin, TSOT-23-6
Rds On Max Id Vgs 2A
Voltage Breakdown 6-TSOP
Gate Charge Qg Max Vgs 1.5V @ 250µA
Expanded Description Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
Operating Temperature -55°C ~ 150°C (TJ)
Manufacturer Part Number SI3900DV-T1-E3
Drainto Source Voltage Vdss Logic Level Gate
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 4nC @ 4.5V
Current Continuous Drain Id25 C 20V
Moisture Sensitivity Level M S L 1 (Unlimited)

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