SI3900DV-T1-E3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI3900DV-T1-E3 |
| Manufacturer | 4D Systems |
| Description | MOSFET 2N-CH 20V 2A 6-TSOP |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| Series | TrenchFET® |
| Power Max | 830mW |
| F E T Feature | 2 N-Channel (Dual) |
| Other Names | SI3900DV-T1-E3TR SI3900DVT1E3 |
| Ro H S Status | Tape & Reel (TR) |
| Vgsth Max Id | 125 mOhm @ 2.4A, 4.5V |
| Mounting Type | Surface Mount |
| Polarization | SOT-23-6 Thin, TSOT-23-6 |
| Rds On Max Id Vgs | 2A |
| Voltage Breakdown | 6-TSOP |
| Gate Charge Qg Max Vgs | 1.5V @ 250µA |
| Expanded Description | Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Manufacturer Part Number | SI3900DV-T1-E3 |
| Drainto Source Voltage Vdss | Logic Level Gate |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 4nC @ 4.5V |
| Current Continuous Drain Id25 C | 20V |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |