SI3588DV-T1-E3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI3588DV-T1-E3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N/P-CH 20V 2.5A 6TSOP |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| Series | TrenchFET® |
| F E T Type | N and P-Channel |
| Power Max | 830mW, 83mW |
| Packaging | Cut Tape (CT) |
| F E T Feature | Logic Level Gate |
| Other Names | SI3588DV-T1-E3CT |
| Vgsth Max Id | 450mV @ 250µA (Min) |
| Package Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 80 mOhm @ 3A, 4.5V |
| Base Part Number | SI3588 |
| Gate Charge Qg Max Vgs | 7.5nC @ 4.5V |
| Detailed Description | Mosfet Array N and P-Channel 20V 2.5A, 570mA 830mW, 83mW Surface Mount 6-TSOP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | 6-TSOP |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Continuous Drain Id25 C | 2.5A, 570mA |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |