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SI3586DV-T1-E3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SI3586DV-T1-E3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N/P-CH 20V 2.9A 6TSOP
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
F E T Type N and P-Channel
Power Max 830mW
Packaging Tape & Reel (TR)
F E T Feature Logic Level Gate
Other Names SI3586DV-T1-E3TR SI3586DVT1E3
Vgsth Max Id 1.1V @ 250µA
Package Case SOT-23-6 Thin, TSOT-23-6
Mounting Type Surface Mount
Rds On Max Id Vgs 60 mOhm @ 3.4A, 4.5V
Base Part Number SI3586
Gate Charge Qg Max Vgs 6nC @ 4.5V
Detailed Description Mosfet Array N and P-Channel 20V 2.9A, 2.1A 830mW Surface Mount 6-TSOP
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package 6-TSOP
Drainto Source Voltage Vdss 20V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Continuous Drain Id25 C 2.9A, 2.1A
Moisture Sensitivity Level M S L 1 (Unlimited)

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