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SI3529DV-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SI3529DV-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N/P-CH 40V 2.5A 6-TSOP
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
F E T Type N and P-Channel
Power Max 1.4W
Packaging Tape & Reel (TR)
F E T Feature Logic Level Gate
Vgsth Max Id 3V @ 250µA
Package Case SOT-23-6 Thin, TSOT-23-6
Mounting Type Surface Mount
Rds On Max Id Vgs 125 mOhm @ 2.2A, 10V
Gate Charge Qg Max Vgs 7nC @ 10V
Detailed Description Mosfet Array N and P-Channel 40V 2.5A, 1.95A 1.4W Surface Mount 6-TSOP
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package 6-TSOP
Drainto Source Voltage Vdss 40V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 205pF @ 20V
Current Continuous Drain Id25 C 2.5A, 1.95A
Moisture Sensitivity Level M S L 1 (Unlimited)

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